"Vertex Detector R&D for Future High Energy Linear e+e- Colliders"
The Pixel Vertex Detector R&D project of the Oregon-Yale group is aimed at developing
a vertex detector sensor for the ILC that satisfies the physics and machine requirements
for vertexing. The time structure of the ILC necessitates an extremely fast sensor for
the vertex detector elements. This effort, therefore, has started on the development
of monolithic CMOS pixel detectors that allow extremely fast, non-sequential readout of
only pixels containining hits. This feature significantly decreases the readout time required
from a device that reads out all pixels, such as a CCD.
Another important possibility for these CMOS detectors is the time stamping of hits with
single bunch crossing precision. This significantly reduces the effective backgrounds.
During 2004-5, in collaboration with SARNOFF, Inc. (RCAÂs silicon fabrication house) with
whom we had an R&D contract, we developed a draft conceptual design for a device. Each chip
consists of two particle detection layers, one consisting of an array of 50μ x 50μ pixels
(Macro Pixel Array) and one consisting of an array of 5μ x 5μ pixels (Micro Pixel Array)
Each pixel of the Macro Pixel Array detects up to four hits in an ILC bunchtrain (~ 1 msec) and records
the time of the hits to a precision better than the inter-bunch spacing. The Micro Pixel
Array records hits in the x-y array with 3 bit pulse height resolution within each pixel.
The project is now ready to move on to detailed design, which will start in 2005-6.
Issues to be addressed during the detailed design phase include:
 Achieving all the design features simultaneously on one chip
 Thinning of the devices
 Radiation hardness
 Power consumption
 Impact of electromagnetic interference on the functioning of the device at the pixel level
This topic: ILC/WWS
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Topic revision:
26 Oct 2005, JimBrau

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